Product Summary
The BSM75GD120DLC is an IGBT-module.
Parametrics
BSM75GD120DLC absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 1200 V; (2)Kollektor-Dauergleichstrom TC = 80 ℃ IC, nom: 75 A; (3)DC-collector current TC = 25 ℃ IC: 125 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 150 A; (5)Gesamt-Verlustleistung total power dissipation TC=25℃, Transistor Ptot: 500 W; (6)Gate-Emitter-Spitzenspannung, gate-emitter peak voltage VGES: +/- 20V; (7)Dauergleichstrom, DC forward current IF: 75 A; (8)Periodischer Spitzenstrom repetitive peak forw current tP = 1 ms IFRM: 150 A.
Features
BSM75GD120DLC features: (1)Kollektor-Emitter Sattigungsspannung IC = 75A, VGE = 15V, Tvj = 25℃ VCE sat: 2.1 to 2.6 V; (2)collector-emitter saturation voltage IC = 75A, VGE = 15V, Tvj = 125℃ VCE sat: 2.4 to 2.9 V; (3)Gate-Schwellenspannung, gate threshold voltage IC = 3mA, VCE = VGE, Tvj = 25℃ VGE(th): 4.5 to 6.5 V; (4)Gateladung; (5)gate charge VGE = -15V to+15V QG: 0,8 μC; (6)Eingangskapazitat input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 5.1 nF; (7)Ruckwirkungskapazitat, reverse transfer capacitance f = 1MHz, Tvj = 25℃,VCE = 25V, VGE = 0V Cres: 0.33 nF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM75GD120DLC |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 125A |
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Infineon Technologies |
IGBT Modules 1200V 75A CHOPPER |
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Infineon Technologies |
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BSM75GB120DN2 |
Infineon Technologies |
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BSM75GB120DN2_E3223c-Se |
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