Product Summary
The F4-150R12KS4 is an IGBT-Module.
Parametrics
F4-150R12KS4 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC collector current: 150A; (3)repetitive peak collector current: 300A; (4)total power dissipation: 960W; (5)gate emitter peak voltage: ±20V.
Features
F4-150R12KS4 features: (1)forward voltage: 2.30V; (2)peak reverse recovery current: 51A; (3)recovered charge: 7.00μC; (4)reverse recovery energy: 2.40 mJ; (5)thermal resistance, junction to case: 0.32K/W.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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F4-150R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 180A |
Data Sheet |
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F4-100R12KS4 |
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F4-150R06KL4 |
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