(China (Mainland))
Product Summary
The FZ1200R12KF4 is a new device from European Power-semiconductor and Electronics Company. The collector-emitter voltage of VCES is 1200V, and the DC-collector current(IC) is 1200A.
Parametrics
FZ1200R12KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collctor current tp=1 ms, ICRM: 2400A; (4)total power dissipation tC=25℃, Transistor /transistor, Ptot: 7800W; (5)gate-emitter peak voltage, VGE: ±20V; (6)DC forward current, IF: 1200A; (7)repetitive peak forw. current tp=1ms, IFRM: 2400A; (8)insulation test voltage RMS, f=50 Hz, t= 1 min, VISOL: 2,5kV.
Features
FZ1200R12KF4 characteristic: (1)collector-emitter saturation voltage, iC=1,2kA, vGE=15V, tvj=25℃ vCE sat: -2,7 to 3,2V; (2)collector-emitter saturation voltage, iC=1,2kA, vGE=15V, tvj=125℃: -3,3 to 3,9V; (3)gate threshold voltage iC=48mA, vCE=vGE, tvj=25℃,vGE(th): 4,5 to 6,5V, and the typ is 5,5V ; (4)input capacity fO=1MHz,tvj=25℃,vCE=25V, vGE=0V, Cies: -90nF; (5)collector-emitter cut-off current, vCE=1200V, vGE=0V, tvj=25℃ iCES - 16 - mA; (6)collector-emitter cut-off current, vCE=1200V, vGE=0V, tvj=125℃ - 100 200 mA; (7)gate leakage current, vCE=0V, vGE=20V, tvj=25℃, iGES: 400 nA; (8)Emitter-Gate Reststrom gate leakage current, vCE=0V, vEG=20V, tvj=25℃, iEGS: 400nA; (9)turn-on time (inductive load), iC=1,2kA,vCE=600V ton, vL = ±15V, RG= 0,82 , tvj=25°: 0,7μs; (10)turn-on time (inductive load), iC=1,2kA,vCE=600V ton, vL = ±15V, RG= 0,82 , tvj=125°: 0,8μs; (11)storage time (inductive load) iC=1,2kA,vCE=600V ts, vL = ±15V, RG= 0,82 , tvj=25° - 0,9 - μs; (12)storage time iC=1,2kA,vCE=600V ts, vL = ±15V, RG= 0,82 , tvj=125° - 1,0 - μs; (13)fall time (inductive load) iC=1,2kA,vCE=600V, tf, vL = ±15V, RG= 0,82 , tvj=25°: 0,10μs; (14)fall time (inductive load) iC=1,2kA,vCE=600V, tf, vL = ±15V, RG= 0,82 , tvj=125°: 0,15μs.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FZ1200R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
FZ1200R12HE4 |
Infineon Technologies |
IGBT Modules |
Data Sheet |
|
|
||||||||||||
|
FZ1200R12HP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
Data Sheet |
|
|
||||||||||||
|
FZ1200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1200A SINGLE |
Data Sheet |
|
|
||||||||||||
|
FZ1200R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|
||||||||||||
|
FZ1200R12KF5 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
Data Sheet |
|
|
||||||||||||
|
FZ1200R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
|
|
||||||||||||
