Product Summary
The bsm150gb60dlc is an IGBT module.
Parametrics
bsm150gb60dlc absolute maximum ratings: (1)collector emitter voltage, VCES: 600V; (2)DC collector current, ICnon: 150A; (3)repetitive peak collector current, ICRM: 300A; (4)total power dissipation, Ptot: 595W; (5)gate emitter peak voltage, VGES: ±20V; (6)DC forward current, IF: 150A; (7)repetitive peak forw current, IFRM: 300A.
Features
bsm150gb60dlc features: (1)input capacitance, Cies: 6.5nF; (2)reverse transfer capacitance, Cres: 0.6nF; (3)collector emitter cut off current, ICES: 1mA; (4)gate emitter leakage current, IGES: 400nA.
Diagrams
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![]() BSM150GB60DLC |
![]() Infineon Technologies |
![]() IGBT Modules 600V 150A DUAL |
![]() Data Sheet |
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![]() BSM100GAL120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
![]() Data Sheet |
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![]() BSM100GAL120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BSM100GAR120DN2 |
![]() Infineon Technologies |
![]() IGBT Transistors 1200V 100A DUAL |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BSM100GB120DLC |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
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![]() |
![]() BSM100GB120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
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![]() |
![]() BSM100GB120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
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