(China (Mainland))
Product Summary
The 2MBI200U4H-120 is an IGBT module.
Parametrics
2MBI200U4H-120 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC: 300A; ICP: 600A; -IC: 200A; -IC pulse: 400A; -IC pulse: 400A; (4)collector power dissipation, PC: 1040W; (5)junction temperature, Tj: 150℃; (6)storage temperature, Tstg: -40 to 125℃.
Features
2MBI200U4H-120 features: (1)zero gate voltage collector current, ICES: 2.0mA; (2)gate-emitter leakage current, IGES: 400mA; (3)gate-emitter threshold voltage, VGE(th): 4.5 to 6.5V; 6.5V typ; (4)collector-emitter saturation voltage ,VCE(sat): 2.25V; (5)input capacitance, Cies: 2.2nF.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2MBI200U4H-120 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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