Product Summary
The BSM50GD170DL is an IGBT module.
Parametrics
BSM50GD170DL absolute maximum ratings: (1)collector-emitter voltage VCES: 1700 V; (2)DC-collector current IC: 50 A; (3)repetitive peak collector current ICRM: 100 A; (4)total power dissipation Ptot: 480 W; (5)gate-emitter peak voltage VGES: ± 20 V; (6)DC forward current IF: 50 A; (7)repetitive peak forw. current IFRM: 100 A; (8)I2t - value, Diode, I2t: 1100 A2s; (9)insulation test voltage VISOL: 3,4 kV.
Features
BSM50GD170DL features: (1)forward voltage, VF: 6 V; (2)peak reverse recovery current, IRM: 36 A; (3)recovered charge, Qr: 6 μAs; (4)reverse recovery energy, Erec: 2 mWs.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GD170DL |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 100A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
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BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB170DN2 |
Infineon Technologies |
IGBT Modules 1700V 50A 500W HALF-BRIDGE |
Data Sheet |
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BSM50GB60DLC |
Infineon Technologies |
IGBT Modules 600V 50A DUAL |
Data Sheet |
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BSM50GD120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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