(China (Mainland))
Product Summary
The F4-75R12MS4 is an IGBT module. It is suitable for high frequency switching application.
Parametrics
F4-75R12MS4 absolute maximum ratings: (1)collector0emitter voltage, VCES: 1200V; (2)DC-collector current, IC nom: 75A; IC: 100A; (3)repetitive peak collector current, ICRM: 150A; (4)total power dissipation, Ptot: 500W; (5)gate-emitter peak voltage, VGES: ±20V.
Features
F4-75R12MS4 features: (1)high short circuit capability, self limiting short circuit current; (2)low switching losses; (3)VCEsat with postive temperature coefficient.
Diagrams
| Image | Part No | Mfg | Description |  |
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 F4-75R12MS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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F4-75R06W1E3 |
Infineon Technologies |
IGBT Modules N-CH 600V 100A |
Data Sheet |
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F4-75R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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F4-75R12MS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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