Product Summary
The fz1600r12kl4c is an IGBT module.
Parametrics
fz1600r12kl4c absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 2450A; (3)repetitive peak collector current, ICRM: 3200A; (4)total power dissipation, Ptot: 10KW; (5)gate-emitter peak voltage, VGES: +/-20V; (6)DC forward current, IF: 1600A; (7)repetitive peak forw. current, IFRM: 3200A; (8)I2t value, diode, I2t: 590kA2s; (9)insulation test voltage, ViSOL: 2.5kV.
Features
fz1600r12kl4c features: (1)collector-emitter saturation voltage, VCE sat: 2.1 to 2.6V; (2)gate threshold voltage, VGE9th): 4.5 to 6.5V; 5.5V typ; (3)gate charge, QG: 17μC; (4)input capacitance, Cies: 110nF; (5)reverse transfer capacitance, Cres: 7nF; (6)collector-emitter cut-off current, ICES: 0.04 to 1.5mA; (7)gate-emitter leakage current, IGES: 600nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FZ1600R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1600A SINGLE |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FZ1600R12HP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1600A |
Data Sheet |
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FZ1600R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1600A SINGLE |
Data Sheet |
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FZ1600R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1600A SINGLE |
Data Sheet |
Negotiable |
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FZ1600R12KF4< |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 1.6KA |
Data Sheet |
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FZ1600R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1600A SINGLE |
Data Sheet |
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FZ1600R17HP4 |
Infineon Technologies |
IGBT Modules IGBT 1700V 1600A |
Data Sheet |
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