(China (Mainland))
Product Summary
The MG300J1US51 is a silicon N channel IGBT. It is suitable for high power switching applications and motor control applications.
Parametrics
MG300J1US51 absolute maximum ratings: (1)collector-emitter voltage, VCES: 600V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 300A; 1ms, ICP: 600A; (4)forward current, DC, IF: 300A; 1ms, IFM: 600A; (5)collector power dissipation, PC: 1300W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, VISOL: 2500V.
Features
MG300J1US51 features: (1)The electrodes are isolated from case; (2)high input impedance; (3)includes a complete half bridge in one package; (4)enhancement-mode; (5)high speed; (6)low saturation voltage.
Diagrams
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 MG300Q2YS60A |
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IGBT MOD CMPCT DUAL 1200V 300A |
Data Sheet |
Negotiable |
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MG300Q2YS61 |
Other |
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Data Sheet |
Negotiable |
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MG300Q2YS65H |
Other |
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Data Sheet |
Negotiable |
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