MG300Q1US21

insulated gate bipolar transistor, 1200V, 300A, 2000W, high input impedance, high speed

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Price:: US $68.00~103.00 / piece [Get Latest Price]

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	US $68.00~103.00

PartNumber:: MG300Q1US21

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2011-11-28

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Part Number:MG300Q1US21
US $68.00 - 103.00
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Product Summary

The MG300Q1US21 is an insulated gate bipolar transistor. The applications of the device include GTR module, silicon N channel IGBT, high power switching applications and motor control applications.

Parametrics

MG300Q1US21 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 300A; 1ms, ICP: 600A; (4)forward current, DC, IF: 300A; 1ms, IFM: 600A; (5)collector power, PC: 2000W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V.

Features

MG300Q1US21 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement mode; (5)the electrodes are isolated from case.