Product Summary

The bsm75gb120dn2 is an IGBT Power Module.

Parametrics

bsm75gb120dn2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 105A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 210A; (6)Power dissipation per IGBT: 625W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃; (9)Thermal resistance, chip case RthJC≤ 0.2 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.5K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec.

Features

bsm75gb120dn2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

bsm75gb120dn2 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60