Product Summary

The FF600R12KF4 is an IGBT Silicon Module.

Parametrics

FF600R12KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200 V; (2)DC-collector current, IC: 600 A; (3)repetitive peak collctor current, ICRM: 1200 A; (4)total power dissipation, Ptot: 3900 W; (5)gate-emitter peak voltage, VGE: ± 20 V; (6)DC forward current, IF: 600 A; (7)repetitive peak forw. current, IFRM: 1200 A; (8)insulation test voltage, VISOL: 2,5 kV.

Features

FF600R12KF4 features: (1)collector-emitter saturation voltage, VCE sat: 2.7 to 3.2V; (2)gate threshold voltage: 3.3 to 3.9V; (3)input capacity, Cies: 45nF; (4)collector-emitter cut-off current, iCES: 8mA; (5)gate leakage current, iGES: 400nA; (6)gate leakage current, iEGS: 400nA; (7)turn-on time (inductive load), tON: 0.7μs; (8)storage time (inductive load), ts: 0.9μs; (9)fall time (inductive load), tf: 0.10μs; (10)turn-on energie per pulse, Eon: 90W; (11)turn-off energie loss per pulse, Eoff: 90mW.

Diagrams

FF600R12KF4 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF600R12KF4
FF600R12KF4

Infineon Technologies

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Data Sheet

0-1: $595.05
1-3: $535.55
3-5: $476.04
5-10: $446.29
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(USD)
Quantity
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