Product Summary
The FS50R17KE3 is an IGBT module.
Parametrics
FS50R17KE3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1700V; (2)DC-collector current, IC: 82A; (3)repetitive peak collector current, ICRM: 100A; (4)total power dissipation, Ptot 345W; (5)gate-emitter peak voltage, VGES: +/-20V.
Features
FS50R17KE3 features: (1)forward voltage ,VF: 1.9V; (2)peak reverse recovery current, IRM: 83.5A; (3)recovery charge, Qr: 24.5μC; (4)reverse recovery enery, Erec: 13.5mJ; (5)thermal resistance, junction to case, RthJC: 0.63K/W.
Diagrams

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![]() FS50R17KE3_B17 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT MODULE HALF BRG 50A 1700V |
![]() Data Sheet |
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![]() FS50R06W1E3 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 600V 70A |
![]() Data Sheet |
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![]() FS50R12KE3 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 50A 3-PHASE |
![]() Data Sheet |
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![]() |
![]() FS50R17KE3_B17 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT MODULE HALF BRG 50A 1700V |
![]() Data Sheet |
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![]() FS50R12W2T4_B11 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 50A |
![]() Data Sheet |
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![]() FS50R12W2T4 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 50A |
![]() Data Sheet |
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![]() FS50R12KT3 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 75A |
![]() Data Sheet |
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(China (Mainland))









