(China (Mainland))
Product Summary
The BSM100GB120DLCK is an IGBT-module.
Parametrics
BSM100GB120DLCK absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: TC=25℃, 200A; (3)repetitive peak collector current: tP = 1 ms, TC = 80℃, 200A; (4)total power dissipation: 0,78 kW; (5)gate-emitter peak voltage: ±20V; (6)DC forward current: 100A; (7)repetitive peak forw. current: 200A; (8)insulation test voltage: 2,5 kV.
Features
BSM100GB120DLCK specifications: (1)collector-emitter saturation voltage, IC = 100A, VGE = 15V, Tvj; (2) = 125℃: 2, 4V; (3)gate threshold voltage: 4,5 min, 5,5 typ, 6,5 max. V; (4)gate charge: 1,1 μC; (5)input capacitance: 6, 5 nF; (6)collector-emitter cut-off current: 0,5mA; (7)gate-emitter leakage current: 400nA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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